Part Number Hot Search : 
196L42 MV324 1281N 3745SN HMC6300 CNY18 F200B VRF150MP
Product Description
Full Text Search
 

To Download PSIIX20-12 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 ECO-PACTM 2 IGBT Module
Preliminary Data Sheet
PSIIX 20/12
IC25 = 28 A = 1200 V VCES VCE(sat)typ. = 2.1 V
O9 P9 L9 A5 C5 A1 C1 G10 H10 S18 E5 G14 E1 W18 I14 K14 K10
PSIIX 20/12
IGBTs
Symbol VCES VGES IC25 IC80 I CM VCEK tSC (SCSOA) P tot Conditions
TVJ = 25C to 150C TC = 25C TC = 80C VGE = 15 V; RG = 56 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900 V; VGE = 15 V; RG = 56 ; TVJ = 125C non-repetitive TC = 25C
Maximum Ratings
1200 20 28 17 45 VCES 10 100 s W V V A A A
Features
* *
*
Symbol Conditions Characteristic Values
(TVJ = 25C, unless otherwise specified) min. typ. max.
*
VCE(sat) VGE(th) ICES IGES td(on) tr t d(off) tf Eon Eoff QGon RthJC RthJH
IC = 16 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C 20 V VCE = 0 V; VGE = 5.5
1.8 2.1 0.01 0.1 70 40 250 100 1.55 1.7 47 tbd
2.1 6.5 0.1
V V V
*
Inductive load, TVJ = 125C VCE = 600 V; IC = 15 A VGE = 15 V; RG = 56 VCE = 600 V; VGE = 15 V; IC = 15 A (per IGBT) (per IGBT) with heatsink compound
mA mA Applications 500 nA * AC drives ns * power supplies with power factor ns correction ns n s Advantages Easy to mount with two screws mJ * Space and weight savings mJ * * Improved temperature and power cycling capability nC * High power density 1.3 K/W * Small and light weight K/W
Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - square RBSOA @ 3x IC - low EMI Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate UL release applied
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
(c) 2009 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 email: info@powersem.de FAX: 09122 - 9764 - 20
PSIIX 20/12
Diodes
Symbol IF25 IF80 Symbol VF I RM trr RthJC RthJH Conditions
TC = 25C TC = 80C
Maximum Ratings
33 22 A A
Package style and outline
Dimensions in mm (1mm = 0.0394")
Conditions
IF = 20 A; TVJ = 25C TVJ = 150C IF = 20 A; diF/dt = -750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) (per diode) with heatsink compound
Characteristic Values min. typ. max.
1,8 2,2 tbd tbd tbd 2,2 V V A ns 1,5 K/W K/W
Component
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight
IISOL 1 mA; 50/60 Hz; t = 1 s Mounting torque (M4) Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 Tolerances: +/- 0,3 mm
Conditions
Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2 11.2 24 mm mm g
(c) 2009 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 email: info@powersem.de FAX: 09122 - 9764 - 20
PSIIX 20/12
30 25 20
IC [A]
VGE = 15 V
30 25 20
TVJ = 25C TVJ = 125C TVJ = 125C
VGE = 15 V 17 V 19 V
13 V
11 V
15 10 5 0 0
IC [A]
15 10 5 0
9V
1
2
VCE [V]
3
0
1
2
3
VCE [V]
4
5
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics 20 IC = 15 A VCE = 600 V 15
30 25 20
IC
15
[A]
VGE [V]
10
10 5 0 5 6 7 8 9
VGE [V] Fig. 3 Typ. tranfer characteristics
TVJ = 125C TVJ = 25C
5
0
10 11 12 13
0
10
20
30
QG [nC]
40
50
60
Fig. 4 Typ. turn-on gate charge
4
RG = 56 VCE = 600 V VGE = 15 V TVJ = 125C
2.8
Eon
IC = 15 A VCE = 600 V VGE = 15 V TVJ = 125C
3
2.4
Eoff E
E [mJ]
2
2.0
[mJ] Eoff Eon
1
1.6
0 0 5 10 15 20 25 30 35
IC [A] Fig. 5 Typ. switching energy vs. collector current
1.2 40
60
80
100
120
140
160
RG [ ] Fig. 6 Typ. switching energy vs. gate resistance
(c) 2009 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 email: info@powersem.de FAX: 09122 - 9764 - 20


▲Up To Search▲   

 
Price & Availability of PSIIX20-12

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X